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STP7NE10
N - CHANNEL 100V - 0.3 - 7A - TO-220 STripFETTM POWER MOSFET
PRELIMINARY DATA
TYPE STP7NE10
s s s s s
V DSS 100 V
R DS(on) < 0.4
ID 7A
TYPICAL RDS(on) = 0.3 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
1
3 2
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR VGS ID ID I DM (*) P tot dv/dt(1) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 100 100 20 7 4.9 28 45 0.3 6 -65 to 150 175
(1) ISD 7 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/5
(*) Pulse width limited by safe operating area
October 1999
STP7NE10
THERMAL DATA
R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.33 100 1.5 275
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 30 V) Max Value 7 40 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 100 1 10 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V
T c = 100 o C
ON ()
Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = V GS Test Conditions I D = 250 A Min. 2 Typ. 3 0.32 Max. 4 0.4 Unit V
V GS = 10 V ID = 3.5 A
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
7
A
DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D =2.5 A V GS = 0 Min. Typ. 2.5 305 45 21 Max. Unit S pF pF pF
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STP7NE10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 50 V R G = 4.7 V DD = 80 V ID = 5 A I D = 3.5 A V GS = 5 V V GS = 5 V Min. Typ. 6.5 15 14 6 4 18 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol t d(Voff) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 50 V R G = 4.7 V DD =80V R G = 4.7 I D = 3.5A V GS = 10 V I D =7A V GS = 10 V Min. Typ. 25 7 7 8 16 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A I SD = 5 A V DD = 50 V V GS = 0 di/dt = 100 A/s T j = 150 o C 75 210 5.5 Test Conditions Min. Typ. Max. 7 28 1.5 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
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STP7NE10
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
F1
D
G1
E
Dia. L5 L7 L6 L4
P011C
L9
4/5
F2
F
G
H2
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STP7NE10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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